LONDON – Toshiba has announced that this month it will start production of white light emitting diodes intended for use by makers of general purpose and industrial lighting using Bridgelux technology.
The white LEDs are made using gallium nitride grown on 200-mm diameter wafers of silicon. Toshiba said it plans to ramp capacity up to 10 million LEDs per month and said it wants to secure a 10 percent market share by 2016.
Production of LED chips is typically done on 2- to 4-inch sapphire wafers. Bridgelux Inc. (Livermore, Calif.) developed a method of manufacturing gallium nitride LEDs on 200-mm silicon wafers, which provides a cost advantage. With backing for Bridgelux from Toshiba, that process was brought to Kaga Toshiba Electronics Corporation, a discrete products manufacturing facility in northern Japan. Plessey Semiconductors Ltd. (Plymouth, England) has also adopted a GaN-on-Si process for LED production but is presently ramping with 6-inch diameter wafers.
The first product of the Toshiba GaN-on-Si line is the TL1F1 series of LEDs that produce 112 lumens at 350-milliamps current. The packaged parts measure 6.4-mm by 5.0-m by 1.35-mm.
The last and final day of the show is usually has the most relaxed atmosphere and this year that proved to be the case once again. It is the shortest day of the show lasting from just 9:00 AM to 3:00 PM.
After having a pretty good first day of the show, I was looking forward to a good second day and it did not disappoint. The second day of the show on Wednesday is the longest day of the show as the exhibit hours go from 9:00 AM until 6:00 PM (day one is 9:00 AM to 5:00 PM and day three is 9:00 AM to 3:00 PM).
It sure doesn’t seem like it has already been a year since IMS2014! Well, technically, it hasn’t been since IMS2014 was in June last year. Once again this year IMS (International Microwave Symposium) is in a state known for its sunshine albeit this time sans the humidity. This year the show visits sunny Phoenix, Arizona.