LONDON – Toshiba has announced that this month it will start production of white light emitting diodes intended for use by makers of general purpose and industrial lighting using Bridgelux technology.
The white LEDs are made using gallium nitride grown on 200-mm diameter wafers of silicon. Toshiba said it plans to ramp capacity up to 10 million LEDs per month and said it wants to secure a 10 percent market share by 2016.
Production of LED chips is typically done on 2- to 4-inch sapphire wafers. Bridgelux Inc. (Livermore, Calif.) developed a method of manufacturing gallium nitride LEDs on 200-mm silicon wafers, which provides a cost advantage. With backing for Bridgelux from Toshiba, that process was brought to Kaga Toshiba Electronics Corporation, a discrete products manufacturing facility in northern Japan. Plessey Semiconductors Ltd. (Plymouth, England) has also adopted a GaN-on-Si process for LED production but is presently ramping with 6-inch diameter wafers.
The first product of the Toshiba GaN-on-Si line is the TL1F1 series of LEDs that produce 112 lumens at 350-milliamps current. The packaged parts measure 6.4-mm by 5.0-m by 1.35-mm.
Every now and then something new comes along that causes you to want to dig down and find out a little more information. Tearing my attention away from Caitlin Jenner for a moment, I thought I'd take a closer look at the remarkable Solar Impulse 2 – an airplane powered solely by solar energy.
When analog engineers get together, the discussion always turns technical with a touch of fun. Laptops open up, schematics are surveyed and discussed, good hearty laughter abounds, and fond reminiscing of analog icons no longer with us brings out old stories and some good memories.
It might seem counterintuitive that an active device solution consumes less power than a passive device. Every design engineer knows that a passive crystal resonator (XTAL) doesn’t draw power, so why use an oscillator in place of an XTAL in a power sensitive application? The answer becomes clear when total system power is considered.