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MOSFETS Archive
January 2008 - September 2008

Standard linear components represent roughly one-third of the market for analog and mixed-signal semiconductor components. They include op amps, data converters, voltage regulators (called power management devices), interface components (logic, display and bus driver ICs), RF and wireless transceiver elements, and discretes (including MOSFETS, analog switches and diodes). Op amps can be subcategorized into current and voltage output devices; data converters can be analog-to-digital or digital-to-analog with various resolutions. The current listings, drawn primarily from EE Times’ "Product Week," lists the showcased devices under their broad umbrella categories.

  • 600-V driver ICs meet AEC-Q100 standards
  • 1A phototriac eliminates need for separate power TRIAC
  • Avago expands gate drive optocoupler line
  • MOSFETs offer high efficiency for synchronous dc/dc conversion
  • Power MOSFETs yield 0.052-ohms in tiny footprint
  • Renesas rolls dual-type power MOSFET
  • MOSFET combines package, process advances for motor-drive efficiency
  • Motor driver targets portable applications
  • MOSFET drivers help increase system efficiency
  • 25V DirectFET chipset optimized for high frequency DC-DC applications
  • MOSFET pre-driver IC targets automotive, industrial systems
  • Synchronous N-channel driver drives MOSFETs at top speed
  • High-frequency MOSFETs increase handheld power efficiency
  • Three-phase gate driver integrates op amp, bootstrap functionality
  • Class-D audio amplifier driver features 200V bridge supply voltage
  • IC drives four N-channel MOSFETs in a high-side configuration
  • Vishay releases MICRO FOOT Power MOSFET
  • Latest RF/microwave products at MTT-S
  • Gate driver drives two n-channel MOSFET drivers
  • IC photocoupler housed in SDIP package
  • IR expands RAD-Hard logic-level MOSFET line
  • MOSFETs feature lowest on-state resistance in SuperSO8 leadless packages
  • Full bridge MOSFET is automotive grade
  • Freescale launches RF devices for radar
  • Power MOSFETS offered in PowerPAK SC-70 package
  • ST enhances high-voltage converter line
  • 30V MOSFET line achieves low on-state resistance
  • Gate drive optocoupler targets hybrid electric vehicles
  • ST extends ESBT voltage rating for low-loss SMPS design
  • IR tailors MOSFETs for power supplies, electric motors
  • ST advances IGBT switching performance
  • MOSFET gate drivers minimize switching loss
  • MOSFET line offered in robust TO-247 package
  • Single chip integrates two-channel isolator, 4A driver
  • Flash capacitor chargers deliver small size, fast charging
  • CMOS motor drivers provide high integration
  • Power amplifiers offer high linearity, low current consumption
  • Avago delivers tiny FETs for multiple wireless apps
  • Power modules save space in two-phase SRM motor designs
  • Dual MOSFETs offer 30 percent smaller mount area
  • Power MOSFET delivers lowest profile and on-resistance for portables
  • FETs housed in ultra-small packaging for wireless applications
  • RF power transistors target 2.5- to 2.7-GHz WiMAX apps
  • 30V power MOSFET achieves ultra-low on-resistance
  • MOSFET drivers integrate an adjustable LDO in a tiny TDFN
  • 40V synchronous rectifier improves efficiency in switching designs
  • N-channel MOSFET driver sinks up to 5 amps
  • 1200V IGBTs lower system operating temperature
  • Single phase fan pre-driver minimizes external component count
  • Digital isolators integrate power, gate drivers in one package
  • Vishay houses half-bridge IGBT modules in Int-A-Pak package
  • Single-chip inverters improve energy efficiency in brushless motor apps
  • Single-chip controller ICs designed for intermediate bus converters
  • Infineon launches 900-V Superjunction MOSFET line
  • Latest power products at APEC 2008
  • MOSFETs deliver fast switching speeds, high power efficiency in small package
  • Power MOSFETs deliver low conduction, low switching losses
  • Surface-mount package shrinks power MOSFETs by 20%
  • 40V P-Channel MOSFET reduces switching losses by 50 percent
  • Toshiba expands MOSFET, Shottky barrier diode line
  • Power MOSFET features low on-resistance of 1.5-milliohms
  • Hot-plug power controllers support PCIe v2.0
  • 600-V gate driver features extra channel
  • Driver powers N-Channel MOSFETs at high speed


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