Durham, N.C.—RF power transistor vendor Nitronex has developed a 28V, 100W-class gallium nitride on silicon (GaN-on-silicon) high-electron mobility transistor (HEMT) for applications operating between 2.1- and 2.7-GHz.
Designed using Nitronex's patented SIGANTICĂ’ NRF1 process, the production qualified GaN-on-silicon NPT25100 RF power transistor is suitable for continuous wave (CW), pulsed, WiMAX, W-CDMA and long-term evolution (LTE) applications.
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