BARCELONA – At the annual Mobile World Congress event OmniVision Technologies, Inc. introduced its latest 8 megapixel solution based on its OmniBSI architecture. The demonstration platform combines the advanced capabilities of the OV8810 device with the Fujitsu Microelectronics mobile Milbeaut M-5MO advanced image signal processor (ISP), to deliver what the companies claim is best-in-class image quality and highest quantum efficiency. Designed to improve time-to-market and reduce development costs for mobile phone manufacturers, the platform features 1.4-micron pixel with superior low-light performance, enhanced processing, and distortion compensation.
“Demand for improved image quality in smart phones is growing rapidly, resulting in a shift to higher pixel resolutions,” said Keith Horn, chief operating officer at Fujitsu Microelectronics America. “The combination of OmniVision's industry-leading OmniBSI architecture with our advanced Milbeaut image processing chip has resulted in the industry's highest quality 8-megapixel mobile camera solution.”
The Fujitsu mobile Milbeaut M-5MO advanced ISP takes advantage of its enhanced processing capabilities to manage pre- and post-processed image data from image sensors. Its new Affine transformation function compensates for image distortion at a pixel level, caused by optical anomalies. The ISP also supports image sensors with MIPI interfaces for high-speed data transfer.
OmniVision's backside illumination (BSI) architecture represents a radical, new approach to traditional CMOS image sensor technology, essentially inverting the sensor to collect light from the backside, which offers the most direct path for light to strike the pixel. The result is a greatly improved fill factor, greater quantum efficiency and significantly reduced cross-talk, which means both greater sensitivity and better color reproduction.
Developed with support from long-time foundry and process technology partner, Taiwan Semiconductor Manufacturing Corporation, the OmniBSI architecture involves turning the sensor upside down so that it collects light through what was previously the backside of the sensor, the silicon substrate. This approach differs from conventional front-side illumination (FSI) image sensors, where the amount of light reaching the photo-sensitive area is limited, in part, by the multiple metal and dielectric layers required to enable the sensor to convert photons into electrons.