Content posted in March 2011
Large diameter high temperature solder-in EMI filters
Articles 3/29/2011 Post a comment
Large diameter high temperature solder-in EMI filters Spectrum Advanced Specialty Products added a high temperature version to its solder-in filter product line of 10.16mm (0.400") diameter mounting EMI filters, with a construction able to withstand 300°C.
ADI aims to help engineers solve design challenges in analog, RF and mixed-signal systems
Articles 3/20/2011 Post a comment
Analog Devices is aiming to help engineers save weeks of research and design time by extending the company's Circuits from the Lab reference circuit program to address what the company claims is a growing challenge facing engineers worldwide who are being asked to design products more quickly, with fewer iterations and using an ever broadening range of technologies requiring analog, RF, power and mixed-signal expertise.
Vishay DG9454 SPDT switch
Articles 3/16/2011 Post a comment
Vishay's 12 V triple SPDT switch for 3D shutter glasses features 1.8 V logic compatibility and low power consumption down to < 1 µA in an ultra-compact miniQFN-16 package
There’s a further cool thing you can do with a spreadsheet that most SPICEs can’t. That’s to use the spreadsheet ‘solver’ functionality to adjust component values in the search for a better-fitting circuit – or even to find a set of component values for a circuit you can’t otherwise design.
Infineon MOSFETs have been embedded into PC boards by Schweizer Electronic AG
You now need to adjust component values to achieve some system goal, such as predefined frequency response or time behaviour, and there’s no closed method for working out those values.
As a member of the electronics design community, I am angry and disappointed with the recent deaths of 346 people due to the Boeing MAX 8 design
The theoretical advantages of GaN-based power transistors are now being realized in mainstream system designs. Power supplies for data centers and telecom switching racks are two application areas where GaN transistors show significant improvement in comparison to systems using best-in-class Silicon-based Superjunction devices.