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Paolo Scalisi

Failures in Aerospace Applications, Part 1

Paolo Scalisi
Page 1 / 4   >   >>
yalanand
yalanand
4/30/2014 10:37:53 PM
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Master
Re: n-channel device
@chirshadblog, what you have just brought to sight is more than true. Errors are not things that you can fully avert in any type of activity or with any device. That`s why they always say, nothing is perfect. Only God is perfect. When we sit down and focus on errors that have already caused effect, we get to prevent more errors and to come up with much better electronic devices. In other words, try to look at errors in a positive way. This is the only solution to betterment.

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yalanand
yalanand
4/30/2014 3:51:13 PM
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Master
RE: Radiation damage
I agree that exposure to radiation is the main source of single event errors that are usually common in aerospace environments. These single event errors if overlooked may cause grave damages on the aerospace environment. The errors may reduce the density of devices that are to be installed in the aerospace modules thereby reducing the functionality and efficiency of the aerospace electric modules. The aim of aerospace application engineering which is to achieve a zero failure rate is therefore compromised.

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SunitaT0
SunitaT0
3/31/2014 3:15:14 PM
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Master
Re: Radiation Damage
Exposure to radiation is one of the main reasons behind the SEEs that can occur in aerospace applications. The effects of this radiation could take different forms. For instance, it could induce or create a new current within an IC circuit making the entire IC unstable; as is the case that happens when you encounter Single Event Latchup errors.

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SunitaT0
SunitaT0
3/31/2014 3:00:24 PM
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Master
Re: n - channel device
What I know and believe is that, reliability must be maintained through testing and regular checking. But we must also consider risk taking when creating a product and this is true for somebody to move to the next level. @chrihadblog, I agree with you, assessing damage is more very important before taking the risk.

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SachinEE
SachinEE
3/31/2014 7:41:08 AM
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Master
Re: Displacement damage
I might be getting ahead of the teacher here but I couldn't help responding to this topic, particularly when it comes to the threats posed by Single Event Errors. In particular, the Single event latchup errors, which by the way are the most common of the SEEs, are easy to overlook and ignore but can lead to very serious repercussions in the long run especially when they occur in IC chips used in Aerospace applications where precision is ultimate.

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chirshadblog
chirshadblog
3/10/2014 4:19:32 AM
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Master
Re: n-channel device
@eafpres1: Yes there is a risk as you correctly pointed out but what I feel is that if you are to climb to the next level there should be some risks taken. Anyway assessing the damage is very vital before taking the risk. 

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samicksha
samicksha
3/10/2014 1:26:22 AM
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Artist
Re: n-channel device
 The drain and source may be doped of opposite type to the channel, in the case of depletion mode FETs, or doped of similar type to the channel as in enhancement mod.

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eafpres1
eafpres1
3/5/2014 11:59:52 PM
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Blogger
Re: n-channel device
@etnapowers--there are Piezo MEMS devices like microphones etc., but there are other devices that have cantilevers at nano scale, and tunable capacitors where the MEMS distorts a capacitor plate to tune it.  I think these devices might be more susceptible to proton damage or induced currents.

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amrutah
amrutah
3/4/2014 12:00:44 PM
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Master
Re: Displacement Damage
@Netcrawl: "Proper shielding is  "a must things" in every space operations,..."

   Inside the IC we shield lines (signal routings) either to a ground or supply plane.  What does a shield mean here? Does the chip package comes with a proton or heavy ion absorbing material or does the entire system sit inside a box of vaccumm which can reflect EM radiations and repel protons and heavy ions?

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etnapowers
etnapowers
3/4/2014 4:22:26 AM
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Master
Re: n-channel device
@DaeJ: MEMS are sensors whose basic principle of functioning is based on the piezoeletric effect. This effect does not involve high current values and high doped areas into the device, so I guess that MEMS won't be affected by DD. Anyway we will know very soon if this is right, as soon as the "PhoneSat" project (cited by eafpres) will start, utilizing a smartphone , MEMS powered, in the space environment.

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