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Tim Kaske

The GaN Era Approaches

Tim Kaske
D Feucht
D Feucht
4/15/2015 10:56:31 PM
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Blogger
GaN vs SiC
It will be interesting to see how the new semiconductor materials for power electronics emerge. Besides GaN there is SiC, and it is not at all clear at this point what their trajectories in technology-space will be.

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MeasurementBlues
MeasurementBlues
4/15/2015 5:25:34 PM
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Newbie
Measuring GaN
Steve Sandler wrote an article for EDN on GaN

Gallium Nitride (GaN) FETS are poised to replace silicon power devices in voltage regulators and DC-DC power supplies. Their switching speeds are significantly faster and their RDS(on) is lower than silicon MOSFETS. That can lead to higher power efficiency power sources, which is good for all of us. If you're designing power circuits with GaN devices, you need a grasp of the device's switching speed. To measure that, you're oscilloscope, probes, and interconnects must be fast enough to minimize their effect on the measurements.

How to measure the world's fastest power switch

Unfortunately, I'm unable to post a link due to restrictions on PA.

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eafpres1
eafpres1
4/14/2015 5:43:18 PM
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GaN on Si (sort of)
I think there has been considerable interest in GaN for LEDs as well.  The same issues appear in the sense that any new fab process will take time to become as optimized as the Si substrate processes.  I found an article which describes using a buffer to transition between the Si and GaN lattice spacing, to avoid stress-induced disclocations.  They then mirror on top of GaN, flip the whole thing over onto another substrate, and remove the Si.  They claim that in the near future this process will be economically favorable for production of LEDs.

 

http://www.ledsmagazine.com/articles/print/volume-11/issue-2/features/last-word/gan-on-silicon-a-breakthrough-technology-for-led-lighting-magazine.html

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etnapowers
etnapowers
4/14/2015 10:58:21 AM
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Master
GaN material
"Gallium nitride (GaN) is now coming to the fore, possessing many characteristics that will allow production of power transistors which outperform Si devices. GaN has wider band gap and a considerably higher critical electric field, as well as very high electron mobility."

 

I agree, but there is a wealth of technical expertise in the manifacturing tecnique of silicon material, this consideration does not apply to the GaN, thus I guess it will last some time before this interesting technology will be mature.

 

 

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