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Chris Jakubiec

eGaN Technology Reliability and Physics of Failure, Blog #4

Chris Jakubiec
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This installment will provide an overview of the physics of failure associated with voltage bias at the gate electrode of gallium nitride (GaN) field effect transistors (FETs).
In this installment we will examine the stress tests that EPC devices are subjected to prior to being considered qualified products
Field reliability is the ultimate metric that corroborates the quality level of eGaN® FETs and ICs that have been deployed in customer applications.
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