REGISTER | LOGIN
Home    Bloggers    Blogs    Article Archives    Messages    About Us   
Tw  |  Fb  |  In  |  Rss
Chris Jakubiec

eGaN Technology Reliability and Physics of Failure Blog #3

Chris Jakubiec
Page 1 / 2 Next >
vnaisualal
vnaisualal
7/13/2016 2:18:53 AM
User Rank
Newbie
Re: Other failure modes
its great one post

50%
50%
c_jakubiec
c_jakubiec
7/12/2016 2:06:47 PM
User Rank
Newbie
Re: Other failure modes
Thanks for inquiring into EPC devices.

eGaN device gates are capable to withstand 6V bias. The gates have been shown to be extremely reliable when operated within the datasheet specifications, and gate reliability data is available in previous blogs as well as the EPC website.

Mobile ion contamination has been identified as a problem in silicon devices many years ago, and is mainly due to the gate oxide layer where these unwanted charges can accumulate. eGaN devices do not have a gate oxide insulator layer, and there is no evidence that mobile ions effect our products. In addition to modern fabs and clean rooms that have significantly reduced the threat of these types of contaminants, EPC chip-scale packages use passivation layers such as silicon nitride to prevent such issues.

50%
50%
dick_freebird
dick_freebird
7/11/2016 7:17:08 PM
User Rank
Teacher
Other failure modes
I have two concerns about EPC's devices which this article and the
qualification regimen do not address.


First, a few years back the bug-a-boo was a destructive gate overvoltage (and/or overcurrent) induced failure mode which was right about 5V, such that you could not "just use a 5V supply and 5V driver" and be confident that some eventual supply transient or drift wouldn't punch out the transistor. Saw some stuff about that being worked on while I was designing an eGaN driver (with measures against such an event). Have not seen anything like the triumphal announcement I'd have expected if the problem were fully understood and solved. Is it?

 

Second, while moisture is interesting, mobile ionic contaminants are the main reason encapsulation is wanted. Certainly silicon CMOS and some bipolar are sensitive. What has been done to "challenge" the eGaN structure with sodium, potassium, other mobile species and prove some degree of immunity?

50%
50%
More Blogs from Chris Jakubiec
This installment will provide an overview of the physics of failure associated with voltage bias at the gate electrode of gallium nitride (GaN) field effect transistors (FETs).
Field reliability is the ultimate metric that corroborates the quality level of eGaN® FETs and ICs that have been deployed in customer applications.
flash poll
educational resources
 
follow Planet Analog on Twitter
Planet Analog Twitter Feed
like us on facebook
our partners
Planet Analog
About Us     Contact Us     Help     Register     Twitter     Facebook     RSS