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GaN transistors address data center and telecom server power requirements
5/12/2019

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Dr. Matthias Kasper, Senior Specialist Application Engineering, Infineon Technologies
Matthias Kasper (S'12) received his M.Sc. and Ph.D. degrees in electrical engineering from the Swiss Federal Institute of Technology (ETH) in Zurich, Switzerland, in 2011 and 2016, respectively. During his studies, he focused on power electronics, power systems, and control of mechatronic systems. In 2011, he joined the Power Electronic Systems Laboratory, ETH Zurich, where he worked as a Ph.D. student and later as a Postdoctoral Researcher in close collaboration with industry partners. His research interests include photovoltaic energy systems, single-phase telecom rectifiers, multicell converter systems and GaN wide-bandgap power devices.  Since 2017 he is with Infineon Technologies Austria AG as part of the Systems Innovation Lab team.

Dr. Matthias Kasper, Senior Specialist Application Engineering, Infineon Technologies

Matthias Kasper (S’12) received his M.Sc. and Ph.D. degrees in electrical engineering from the Swiss Federal Institute of Technology (ETH) in Zurich, Switzerland, in 2011 and 2016, respectively. During his studies, he focused on power electronics, power systems, and control of mechatronic systems. In 2011, he joined the Power Electronic Systems Laboratory, ETH Zurich, where he worked as a Ph.D. student and later as a Postdoctoral Researcher in close collaboration with industry partners. His research interests include photovoltaic energy systems, single-phase telecom rectifiers, multicell converter systems and GaN wide-bandgap power devices. Since 2017 he is with Infineon Technologies Austria AG as part of the Systems Innovation Lab team.

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