Author: Dr. Zhongda Li

Dr. Zhongda Li received his B.S in Physics from Peking University in 2007, and Ph.D in Electrical Engineering from Rensselaer Polytechnic Institute in 2013, and joined United Silicon Carbide since then. He has over 10 years' research experience in SiC and GaN devices technologies, as well as product developments mainly focused on SiC JFETs and cascodes. He has published more than 30 technical papers and holds 4 US patents.

 

All posts by Dr. Zhongda Li below: