AWR® and United Monolithic Semiconductors (UMS) introduced an advanced process design kit (PDK) for the UMS PPH25X GaAs pseudomorphic high electron mobility transistor (pHEMT) foundry process. The UMS PPH25X process handles microwave monolithic integrated circuits (MMIC) at frequencies up to 45 GHz.
The PPH25X PDK is specifically developed for high-frequency and high-power designs and is fully qualified by UMS. The process features very high breakdown voltage that achieves power density up to 1 W per millimetre of gate periphery (load-pull power measurements exhibit 5 dB power gain at 30 GHz for a large 8×75 m periphery). Small via-hole definitions through the 70 μm substrate can be connected directly to the sources of the transistors, reducing parasitics and simplifying wideband amplifier design.
AWR's Microwave Office® design environment is well suited for MMIC development. The software integrates tools for high-frequency design: linear and non-linear circuit simulators, electromagnetic (EM) analysis tools, integrated schematic and layout, statistical design capabilities, and parametric cell libraries with built-in design-rule check (DRC). The design suite further a complete front to back flow and the ability to integrate third-party tools.