CMOS RF switches offer GaAs performance

Neubiberg, Germany—Infineon Technologies is shipping in volume RF switches that are manufactured in a CMOS-based process on silicon wafers and offer the equivalent performance of RF switches manufactured in Gallium Arsenide (GaAs) process technology.

The BGS12A CMOS RF switch is available in a fine-pitch Wafer-Level Package (WLP) with dimensions of 0.79mm x 0.54mm, which is approximately 60 percent less PCB space compared to the smallest packaged GaAs RF switch on the market, according to Infineon.

The BGS12A is a general purpose single-pole double-throw (SPDT) RF switch designed for power levels of up to 20dBm, with a P-1dB above 30dBm. The RF switch offers a high RF performance with an insertion loss of only 0.3dB at a frequency of 1.0GHz, low harmonic distortion, good isolation (34dB at 1.0GHz), and fast switching time of less than 4µs.

The interfaces are protected against 1.5kV HBM (Human Body Model) ESD, which improves the production yield of manufacturers of mobile device modules and achieves the required ESD levels. The BGS12A is well-suited for use in low- and medium-power applications of up to 3GHz.

Visit Infineon at the Mobile World Congress (Barcelona, Spain, February 12-14, 2008) in hall 1 on booth #B19.

Pricing: Starts at $0.70 per piece for quantities of 1,000 units.

Availability: Volume quantities.
More information: click here.

Infineon Technologies AG,

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