GaAs LNAs to support cellphone infrastructure, WiMAX applications

Greensboro, No. Carolina—Radio components supplier RF Micro Devices (RFMD) is in pre-production sampling of five GaAs (gallium arsenide) pHEMT (pseudomorphic high electron mobility transistor) LNA s (low-noise amplifiers). No datasheets are on the company's Web site at this time, however.

Nonetheless, when they debut in volume, these devices should prove useful to designers using GSM, CDMA, UMTS, EDGE and WiMAX air interface standards.

These LNAs are sampling to some of RFMD's key cellular infrastructure and WiMAX base station OEMs, but they're slated for production release in September.

Maintain Modulation Quality

The family of LNAs combine the bandwidth and performance necessary for highly linear WCDMA UMTS ((Universal Mobile Telecommunications System) and OFDM (orthogonal frequency division multiplexed) WiMAX modulation standards.

RFMD's five GaAs pHEMT LNAs are part of the company's RF386x product family, including RF3861, RF3863, RF3865, RF3866 , and RF3867 part numbers. These devices cover a broadband frequency range of 380-Mhz through 3.8-GHz, with low noise-figure specs of 0.7-dB. The devices include a variety of configurations (single-stage, dual-stage, and dual-channel).

RFMD's LNA products are packaged in low-cost 5 x 5-mm plastic QFN (quad flat, no lead) packages.

These amplifiers operate over 2.5-V to 6-V, exhibit gain specs up to 30-dB, and show high output IP3 ( (third order intercept) specs of up to +38-dBm. They also exhibit low input and output return loss specs.

For more details contact Jerry Neal or Doug DeLieto, at RF Micro Devices, 7628 Thorndike Rd., Greensboro, No. Carolina 27409-9421. Phone: 336-664-1233. Fax: 336-931-7454.

RF Micro Devices , 336-664-1233,

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