Article

GaAs MMIC integrates gain stage, passive doubler and driver amplifier

Houston, Tex.—Mimix Broadband Inc. has introduced an
active doubler in an RoHS compliant 3X3mm plastic QFN package that
delivers +20 dBm output saturated power (Pout) and 35 dBc fundamental
suppression.

Using 0.15 micron gate length GaAs pseudomorphic high
electron mobility transistor (pHEMT) device model technology, the
doubler covers the 13.5-17.0 / 27.0-34.0 GHz frequency bands and
integrates a gain stage, passive doubler and driver amplifier onto a
single device. Identified as XX1007-QT, the device is well suited for
VSAT, millimeter-wave Point-to-Point Radio, LMDS or SATCOM applications.

The XX1007-QT includes on-chip ESD protection and an integrated
bypassing capacitor, eliminating the need for any external components.
The device has a self-bias configuration, requiring only a positive 5V
supply.

Mimix performs 100% RF testing on the XX1007-QT.

Availability: From stock.
Datasheet: click here.

Mimix Broadband Inc., 1-281-988-4600, www.mimixbroadband.com

0 comments on “GaAs MMIC integrates gain stage, passive doubler and driver amplifier

Leave a Reply

This site uses Akismet to reduce spam. Learn how your comment data is processed.