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GaN power transistor addresses 2.5-, 3.5-GHz markets

Las Vegas—Nitronex has developed a gallium nitride high electron mobility transistor (HEMT) that delivers 45W at 28V for high PAR (peak to average ratio) and pulsed applications.

Designed using Nitronex's patented SIGANTICÓ NRF1 process, the NPT1004 combines a broadband DC to 4GHz high power density GaN-on-Si HEMT with a cost-effective, thermally enhanced PSOP plastic package for light thermal load power applications.

The NPT1004 delivers 5W average power for 2.5-3.5GHz WiMAX applications (single carrier OFDM 64-QAM ¾, 10.3dB peak to average, 10MHz channel bandwidth) and 4.5W for 3.3-3.5GHz WiMAX applications (single carrier OFDM 64-QAM ¾, 10.3dB peak to average, 3.5MHz channel bandwidth).The NPT1004 transistors are lead-free and RoHS compliant.

Pricing: 1,000-piece units is $29.
Availability: Lead time from stock to ten weeks.
Product brief: Click here.

Nitronex, 1-919-424-9100, www.nitronex.com

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