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GaN: The high frequency substrate suitable for 5G applications, Part 7

GaN can be to be combined with silicon to create ICs able to empower 5G communication technology:

MACOM has put forward the possibility of multi-function, multi-technology 5G front ends for the frequencies below 6GHz, made possible by the use of the silicon substrate. It says the homogenous integration of GaN devices and CMOS-based devices on a single silicon chip will offer the prospect of multi-function, digitally-assisted RF MMICs incorporating on-chip digital control and calibration and also on-chip power distribution networks. MACOM has also made it clear that its newly-announced manufacturing agreement with ST Microelectronics is intended to provide the scalability needed to make GaN-on-Si technology truly competitive with the silicon supply chain. ” (Source: Click here for a larger image Innovate UK)

The MACOM Company is contributing to the development of 5G via a new technology that is based on materials, like GaN, having high performance in terms of efficiency and wide frequency range: (see Figure 1)

“… MACOM provides a wide-range of products spanning RF Power Transistors, MMICs, Switches, Power Amplifiers, Lasers, Amplifiers PHYs, and integrated modules that allows us to implement advanced Beam Forming that is energy efficient and available at commercially viable cost structures….With a diverse range of semiconductor processes and technologies – from GaAs and AlGaAs to SiGe and GaN – in combination with our industry-leading product design and packaging expertise, MACOM offers 5G MMICs, E-Band MMICs, and 5G Power Amplifiers and Switches.” (Source: MACOM)

Figure 1

The 5G Portfolio of the MACOM Company (Source: Click here for a larger image MACOM)

The 5G Portfolio of the MACOM Company (Source: Click here for a larger image MACOM)

The possibilities that new substrates, including the GaN, offer are many, including the option to cover a wide range of frequencies as showed in the figure 2 below:

Figure 2

The RF, mmWave to light semiconductor solutions from 4G to 5G of the MACOM Company (Source: Click here for a larger image MACOM)

The RF, mmWave to light semiconductor solutions from 4G to 5G of the MACOM Company (Source: Click here for a larger image MACOM)

GaN material is very effective when utilized to build an integrated circuit for RF applications, that’s the reason why the MACOM Company is focused on GaN on Silicon technology to build RF power transistors (see Figure 3):

“MACOM is the world’s only provider of GaN on Si technology for RF applications. We offer a broad range of continuous wave (CW) GaN on Si RF power transistor products as discrete devices and modules designed to operate from DC to 6 GHz. Our high power CW and linear transistors are ideal for civil avionics, communications, networks, long pulsed radar, and industrial, scientific, and medical applications. Our product portfolio leverages MACOM’s more than 60-year heritage of providing both standard and custom solutions using GaN on Si technology to meet our customers’ most demanding needs. Our GaN on Silicon products, offered as discrete transistors and integrated amplifiers utilizing a 0.5 micron HEMT process and exhibiting excellent RF performance with respect to power, gain, gain flatness, efficiency, and ruggedness over wide operating bandwidths.” (Source: MACOM )

Figure 3

The MAGX-011086, A GaN on Si Transistor made by the MACOM Company 
(Source: MAGX-011086)

The MAGX-011086, A GaN on Si Transistor made by the MACOM Company (Source: MAGX-011086)

GaN is a great opportunity for innovations in the development of electronics technology, do you agree? Do you have experience with GaN ICs?

1 comment on “GaN: The high frequency substrate suitable for 5G applications, Part 7

  1. Andy_I
    October 12, 2018

    Again, the article's figures are missing.

    The link to the larger image of Figure 1 is a bad link, it doesn't go to a figure at all.

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