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IR’s Class D audio directFET MOSFET boosts audio performance

El Segundo, Calif. — The device parameters of International Rectifier Corp.'s DirectFET MOSFET are tuned specifically for improved audio performance such as efficiency, total harmonic distortion (THD) and power density.

IR's IRF6665 metal-oxide semiconductor field-effect transistor (MOSFET) is intended for use in medium power Class D amplifiers. Applications for Class D amplifiers range from battery-powered portable products to high-end professional amplifiers, musical instruments and car and home multimedia systems.

In addition to application-tuned silicon, IR's DirectFET packaging technology enhances performance in Class D audio amplifier circuits by reducing lead inductance, which improves switching performance and reduces electromagnetic interference (EMI) noise. Thermal efficiency enables 100-W operation into 8Ω without a heatsink. Eliminating heatsinks shrinks circuit size and bulk, giving designers more layout flexibility and reduces amplifier cost.

Critical MOSFET parameters determining Class D audio performance include device on-resistance, or RDS(ON) and gate charge, or Qg . These parameters can determine efficiency in a Class D audio amplifier.

The IRF6665 Class D audio DirectFET MOSFET is available now. Pricing is 52 cents each in 10,000-unit quantities.

Click here for the IRF6665 data sheet.

For more information from IR's technical assistance center, please call (310) 252-7105, or visit: www.irf.com

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