CAMBRIDGE, UK The STGW30N120KD and the STGW40N120KD from STMicroelectronics are Insulated Gate Bipolar Transistors (IGBTs) that have low energy loss when conducting, like an ordinary IGBT, and also reduce losses while switching. The 1200V IGBTs series should reduces energy use in everyday motor drives.
The power transistors are aimed at reducing the environmental impact of daily-use equipment such as home appliances, HVAC systems, and industrial machines by minimizing the two major sources of energy loss in motor-control circuits.
These IGBTs achieve power savings using ST’s PowerMESH process. Lower switching losses allow a higher operating frequency, which, in turn, permits smaller and lower-cost components in power-control circuits. In addition, the IGBTs’ compact industry-standard TO-247 package saves component count by also integrating the ultra-fast freewheeling diode required by most circuits.
The 1200V IGBTs are capable of surviving short circuits lasting up to 10 microseconds, making them resistant to common causes of motor-controller failures, such as an error in the gate drive signal, shorting at grounding, and breakdown of motor phase-to-phase insulation.
Hence by improving reliability, the STGW30N120KD and STGW40N120KD save repair and replacement, leading to fewer service calls and reducing the cost of ownership for end users.
The series is rated for 1200V operation, which allows use at higher AC line voltages such as 440V or 480V. The STGW30N120KD and STGW40N120KD are for applications up to 30 and 40A, respectively.