Mimix Broadband, Inc. has introduced the XU1004-BD, a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) transmitter that delivers +14 dBm output third order intercept point (OIP3) and 5 dB conversion gain with +4 dBm local oscillator (LO) drive level.
Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the transmitter covers the 32 to 45 GHz frequency bands and includes a balanced resistive mixer followed by a distributed amplifier, an LO doubler and an LO buffer amplifier. The XU1004-BD transmitter is well suited for point-to-point radio, LMDS, SatCom or VSAT applications.
Mimix performs 100% on-wafer RF and DC testing on the XU1004-BD, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
Production quantities are available today from stock. Technical support is also available from Mimix's applications engineers at 281.988.4600.
Click here for more information or visit www.mimixbroadband.com.