Nitronex : GaN power transistor addresses 2.5 and 3.5GHz markets

Nitronex has developed a gallium nitride high electron mobility transistor (HEMT) that delivers 45W at 28V for high PAR (peak to average ratio) and pulsed applications. Designed using Nitronex's patented SIGANTICÒ NRF1 process, the NPT1004 combines a broadband DC to 4GHz high power density GaN-on-Si HEMT with a cost-effective thermally-enhanced plastic package to offer an optimized solution for light thermal load power applications.

“Feedback from early customers confirms that the NPT1004 is an excellent fit for high peak to average power amplifiers for WiMAX and pulsed waveforms found in radar, telemetry and medical applications,” said Chris Rauh, VP of Marketing and Sales at Nitronex. “We believe these markets need the unique power, bandwidth and efficiency combination GaN devices can offer and Nitronex is excited to offer a product optimized for this customer base.”

The NPT1004 delivers 5W average power for 2.5-3.5GHz WiMAX applications (single carrier OFDM 64-QAM ≤, 10.3dB peak to average, 10MHz channel bandwidth) and 4.5W for 3.3-3.5GHz WiMAX applications (single carrier OFDM 64-QAM ≤, 10.3dB peak to average, 3.5MHz channel bandwidth).

The NP1004 is packaged in a thermally enhanced PSOP package, samples and application boards are available. The 1,000 resale price is $29.00, with a lead time from stock to ten weeks. The NPT1004 transistors are lead-free and RoHS compliant.

For more information about Nitronex's GaN-on-Si products, contact Nitronex at 2305 Presidential Dr., Durham, NC, 27703; call 919-424-9100; or e-mail .

About Nitronex

Specializing in the development and manufacturing of gallium nitride-on-silicon (GaN-on-Si) RF power devices, Nitronex is the global leader in high-performance GaN-on-Si RF power devices. Based on its patented SIGANTIC® process – gallium nitride on silicon technology – Nitronex is at the forefront of commercializing GaN technology for RF applications. The company's ability to combine the disciplines of material growth, wafer processing, device design and wireless applications knowledge is unique to the industry.

For more information, contact:
Ray Crampton
Director of Marketing

Note: The above text is the public part of the press release obtained from the manufacturer (with minor modifications). EETimes Europe cannot be held responsible for the claims and statements made by the manufacturer. The text is intended as a supplement to the new product presentations in EETimes Europe magazine.

0 comments on “Nitronex : GaN power transistor addresses 2.5 and 3.5GHz markets

Leave a Reply

This site uses Akismet to reduce spam. Learn how your comment data is processed.