Advertisement

Article

NXP : LDMOS transistor targets L-band radar applications



Expanding its portfolio of industry-leading RF power transistors, NXP Semiconductors, the independent semiconductor company founded by Philips, today launched its latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor for L-band radar applications delivering breakthrough RF output power of 500W at frequencies between 1..2GHz and 1.4GHz.

Targeted at a wide range of L-band radar applications, NXP’s LDMOS L-band RF power transistor sets new standards for efficiency (>50 percent drain efficiency), gain (17dB) and ruggedness at 500W power level when compared to competing bipolar.

“As the first company that launched LDMOS for L- and S-band applications, NXP’s high-efficiency LDMOS RF power transistor portfolio is establishing a new industry standard by providing our customers with the ultimate performing and most rugged transistor available on the market,” said Mark Murphy, international product marketing manager, RF power products, NXP Semiconductors. “The breakthrough in RF output power of 500W is the result of NXP’s collaborative approach with customers, which helped us to deliver easy to design-in transistors for quick time-to-market.”

Key performance parameters for NXP’s L-band RF transistor (BLL6H1214-500), include:

* 500W peak output power (at 1.4GHz, 100µs pulse width, 25 percent duty cycle)
* 17dB gain
* 50 percent drain efficiency
* Improved ruggedness
* Overdrive without risk up to 5dB
* Improved pulse droop (0.2dB)
* Supply Voltage 50V
* Non-toxic packaging and ROHS compliance

NXP’s device combines the power density of bipolar with the advantages of LDMOS technology for L- band Radar design, and allows for a replacement of the BeO containing packages by an environmentally friendly ceramic package.

Availability

NXP’s BLL6H1214-500 LDMOS L-band RF power transistor is available immediately. More information on NXP’s BLL6H1214-500 is available at http://www.nxp.com/pip/BLL6H1214-500_PL_1.html .

For NXP’s wide range of industry leading 6th generation LDMOS technology. For more information click through http://www.nxp.com/experience_rfpower

About NXP Semiconductors

NXP is a leading semiconductor company founded by Philips more than 50 years ago. Headquartered in Europe, the company has about 33,500 employees working in more than 20 countries and posted sales of USD 6.3 billion (including the Mobile & Personal business) in 2007. NXP creates semiconductors, system solutions and software that deliver better sensory experiences in TVs, set-top boxes, identification applications, mobile phones, cars and a wide range of other electronic devices.

News from NXP is located at www.nxp.com.

Freek van Vlerken
Tel. +31 40 27 25181


Note: The above text is the public part of the press release obtained from the manufacturer (with minor modifications). EETimes Europe cannot be held responsible for the claims and statements made by the manufacturer. The text is intended as a supplement to the new product presentations in EETimes Europe magazine.


0 comments on “NXP : LDMOS transistor targets L-band radar applications

Leave a Reply

This site uses Akismet to reduce spam. Learn how your comment data is processed.