NXP reveals 3-way Doherty reference design to enable more energy efficient RF base stations

Winchester, UK – NXP Semiconductors (Eindhoven, the Netherlands) is to extend the company's portfolio of RF power solutions by unveiling what it claims is the world's most efficient 3-way Doherty amplifier, enabling a new standard of energy efficient RF base stations.

Based on a novel concept, the Doherty circuit performs at efficiency levels in excess of 47 percent, at an average power output of 48 dBm, a gain of 15 dB and peak to average ratio of 8 dB for a multicarrier W-CDMA signal. The current design covers the W-CDMA standard for band I operation. The design is tailored towards high yield, minimum tuning, volume manufacturing.

“With the innovative 3-way Doherty concept, we uniquely combined the advantages of the Doherty amplifier with our Doherty-optimized seventh generation LDMOS technology to deliver the highest efficiency levels and good pre-distort ability, while providing significant cost savings,” said Mark Murphy, Director of marketing for RF power products, NXP Semiconductors. “We developed the Doherty technology in direct response to customer demand for high efficiency amplifiers in emerging cellular standards, such as LTE. This way, we significantly lower the total system power consumption by achieving record power efficiency and performance.”

NXP plans to showcase the 3-way LDMOS-based Doherty amplifiers at the IMS 2009 exhibition in Boston, MA between 9 to 11 June, 2009. A technical presentation on the Doherty concept will be provided during the IMS 2009 conference, held between 7 to 12 June, 2009.

Availability and Pricing

NXP's 3-way LDMOS Doherty amplifier is now available for samples.

Information about: NXP’s RF power solutions

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