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Peregrine : Digital step attenuators offer unmatched flexibility



Peregrine Semiconductor Corporation has released three new UltraCMOS™ Digital Step Attenuators (DSAs) in the expansion of its popular 50Ω DSA line. Building on their high-performance predecessors, along with flexible serial and parallel interface logic these new HaRP™-enhanced devices also offer highly flexible attenuation options by covering a 31.5dB attenuation range in 0.5 dB or 1.0 dB steps.

The PE43502, PE43503 and PE43602 DSAs offer best-in-class linearity, outstanding attenuation accuracy and low Insertion Loss (IL). As with all UltraCMOS silicon-on-sapphire RFICs, there is no gate lag nor phase drift and the devices have exceptionally fast settling time, making them ideal for wireless broadband access applications such as TDE, WiMAX and TD-SCDMA (China’s 3G standard for mobile telecommunication), and for next-generation communication systems such as cellular base stations, repeaters, femtocells and power amplifier distortion cancelling loops.

These new 50-Ohm DSAs have an operating frequency range of near DC up to 6 GHz with exceptional low-frequency performance, Input IP3 of +58 dBm, superior noise immunity and outstanding ESD tolerance of 500V HBM. They work with two typical supply voltages of 3.3V or 5V with very low power consumption, allowing the use of a single devices in both the RF and IF radio sections to save board space.

Peregrine’s newest DSAs provide many additional features, including on-board CMOS logic which facilitates 2.75 V control, and a high- state at power-up (PUP). The devices are available in the ultra-compact, RoHS-compliant QFN 24-lead package (4x4x0.85 mm). All products are sampling now and are priced at PE43502: $2.14 (100K units); PE43503: $2.14 (100K units); and PE43602: $2.52 (100K units).

About UltraCMOS™ Technology and the HaRP Technology Innovation

UltraCMOS™ mixed-signal process technology is a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate providing with high yields and competitive costs. This technology delivers significant performance advantages over competing processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and high levels of integration are paramount. The Company’s revolutionary HaRP™ technology further exploits the fundamental benefits of silicon-on-sapphire, enabling dramatic improvements in harmonic results, linearity and overall RF performance which today remain unmatched by any other RF process technology.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications RF ICs for the wireless infrastructure and mobile wireless; broadband CATV/DTV; communications infrastructure; and high-rel markets.  Manufactured on the Company’s proprietary UltraCMOS™ mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high-growth applications such as WCDMA, EDGE and GSM digital cellular and mobile TV; broadband communications such as DTV/PCTV/DVR; and in high-reliability applications such as telecom infrastructure, industrial, automotive, military and satellite systems. Peregrine UltraCMOS devices are manufactured under licensed foundry partnerships with world-class CMOS semiconductor manufacturers located in Japan, Taiwan, Korea and Australia. The Company, headquartered in San Diego, California, maintains global sales support operations and a worldwide technical distribution network.

Additional information is available on the web at www.psemi.com.


Note: The above text is the public part of the press release obtained from the manufacturer (with minor modifications). EETimes Europe cannot be held responsible for the claims and statements made by the manufacturer. The text is intended as a supplement to the new product presentations in EETimes Europe magazine.


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