Peregrine : Dual-SP4T RF switch delivers 116 dBm IMD3

Peregrine Semiconductor Corp. has announced the PE42112 MultiSwitch™ RFIC, a 2.6V dual-SP4T RF Switch, designed for the needs of the tri-band WCDMA Antenna Switch Module (ASM) market for use in multimode cellular handsets. The switch is comprised of eight symmetric WEDGE-compliant high-power, high linearity RF ports presented in a monolithic wafer scale package. Integrated CMOS decode logic facilitates 4-pin low-voltage CMOS control, while a logic select pin enables a change in logic definition. Peregrine’s innovative HaRP™ technology enhancements on the UltraCMOS process enable the device to deliver an astounding -116 dBm IMD3, a measure exceeding the specification set by the 3GPP standards body for GSM/WCDMA designs.

The PE42112 represents the most integrated and highest performance RF switch on the market today. The integration of two high-performance RF switch cores, a common decoder, logic select and ESD protection in a monolithic flip chip package is enabling multimode architectures that were not viable just a few years ago.

The PE42112 exhibits outstanding harmonic performance of -76 dBc (2fo) and -76 dBc (3fo); low insertion loss of 0.4 dB (900 MHz) and 0.5 dB (1700 MHz); Input IP3 of +68 dBm at 50 Ohms; high ESD tolerance of 2.0 kV at all ports; and on-chip SAW filter over-voltage protection devices. As with all UltraCMOS RF switches, there are no blocking capacitor requirements. The device, offered in unique flip-chip packaging, will be available for sampling in July 2008, is priced in volume at $1.20 (100Ku).

About UltraCMOS™ Technology and the HaRP™ Technology Invention

UltraCMOS™ mixed-signal process technology is a proprietary, patented variation of silicon-on -insulator (SOI) technology on a sapphire substrate providing with high yields and competitive costs. It combines the RF, mixed-signal, and digital capabilities of any other CMOS process, yet tolerates the high power required for high-performance wireless applications. The Company’s revolutionary HaRP™ technology enables dramatic improvements in harmonic results, linearity and overall RF performance; specifications required by the 3GPP standards body for GSM/WCDMA applications which are unmatched in the industry. In particular, long-awaited accomplishments in Intermodulation Distortion (IMD) handling are now available monolithically to multi-band front-end module and handset manufacturers. These significant performance advantages exist over competing processes such as GaAs, SiGe, BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications ICs for the wireless infrastructure and mobile wireless; broadband communications; space, defense and avionics markets. Manufactured on the Company’s proprietary UltraCMOS™ silicon-on-sapphire (SOS) process technology, Peregrine products are uniquely poised to meet the needs of the global RF design community in high-growth applications such as WCDMA and GSM digital cellular, broadband, DTV, DVR and rad-hard space and defense programs. Peregrine, headquartered in San Diego, California, maintains global manufacturing and technical sales support worldwide. Additional information is available on the web at

Rodd Novak, Vice-President of Marketing
Tel: + 1 858 731-9464

Peregrine Semiconductor Europe

Note: The above text is the public part of the press release obtained from the manufacturer (with minor modifications). EETimes Europe cannot be held responsible for the claims and statements made by the manufacturer. The text is intended as a supplement to the new product presentations in EETimes Europe magazine.

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