Geneva—STMicroelectronics' new SuperMESH3 power MOSFETs boast lower on-resistance, better dv/dt performance, and higher breakdown voltage margins for lighting ballasts and switching power supply applications. The technology touts the lowest on-resistance per area among comparable high-voltage, fast-recovery technologies, allowing the devices to be placed into packages as small as DPAKs.
The first SuperMESH3 devices include the 620-volt STx6N62K3, which will be followed by the STx3N62K3 (also at 620 volts), and the 525-volt STx7N52K3 and STx6N52K3. In particular, the SuperMESH technology reduces on-resistance to 1.28 ohms in the STD6N62K3 (DPAK package), and 0.98 ohms in the STD7N52K3.
The new technology also claims a substantial reduction in reverse-recovery time (Trr), gate charge, and intrinsic capacitance for improved switching performance and higher operating frequencies. The SuperMESH3 devices, which combine strip topology with an optimized vertical structure, also claim one of the best-in-class dv/dt specifications. This advantage translates into increased reliability and safety in lighting and other consumer applications.
All SuperMESH3 devices are 100 percent avalanche tested, and also incorporate zener protection to deliver all-round robust performance.
Datasheets : Click here.
Pricing : The STx6N62K3, priced from 62 cents each in 1k pieces, is available in IPAK, DPAK, TO-220, and TO-220FP packages. The STx3N62K3 (2.5 ohms) will be available in IPAK, DPAK, D2PAK, TO-220, and TO-220FP packages. The STx7N52K3 (0.98 ohms) will be introduced in DPAK, D2PAK, TO-220, and TO-220FP packages and the STx6N52K3 (1.2 ohms) will be available in DPAK and TO-220FP packages. They will be in volume production by Q4 2008.
STMicroelectronics , 1-781-861-2650, www.st.com