Renesas Technology Europe today announced the R2J20651NP Integrated Driver-MOSFET. Available in a 40-pin QFN 6 mm x 6 mm package, the device is designed for use in the CPU and DDR type SDRAM power supplies*1 used in PCs and servers and achieves, what is believed to be, the industry’s highest power supply efficiency of 96.5% at Vin = 5 V, Vout = 1.8 V.
The R2J20651NP conforms to the Integrated Driver-MOSFET (DrMOS)*2 Specifications, Revision 3.0 of the Intel Corporation*3, which stipulate a 6 mm x 6 mm package size. It incorporates two high-side/low-side MOSFETs*4 and a driver circuit in a single package.
The device achieves the high power supply efficiency by using Renesas’ most recent tenth-generation power MOSFETs that have improvements in efficiency and lower loss. In addition, use of the product can lead to space savings in end product designs since a reduced heat generation allows a smaller heat sink to be used. Also, the number of capacitors and other passive components can be reduced.
The device offers a high thermal dissipation/low-loss package technology. Compared to the earlier Renesas 8 mm x 8 mm package size, the R2J20651NP reduces the mounting area by about one half. Furthermore, since it can handle up to 35 A, it can easily be implemented in high-density DC-DC converters.
The R2J20651NP includes, for the first time in a DrMOS standard product, a temperature detection function that can output a signal of over-temperature when the driver IC temperature exceeds 130°C. This signal can be used according to the needs of the application, for example, by having the system power supply control IC receive this signal and shut down the system. Furthermore, safer power supply systems can be implemented, since abnormal modes and overload states can be detected in advance by having the power device monitor its own temperature and heat generation.
The device also supports a discontinuous operating mode in which the low-side MOSFET*4 is forcibly turned off by internal logic using the LSDBL# connected to the driver IC. This function is effective both at preventing rapid discharge or load side voltage spikes during pre-bias operation when there is already a voltage remaining on the outputs at startup and at increasing efficiency during light-load operation.
1. CPU and DDR type SDRAM power supplies used in PCs and servers
These include the voltage regulators used for the CPU and the DC-DC converters used for DDR SDRAM and other memories. They convert the input voltage to the supply voltage required by the CPU or DDR type SDRAM. For example, these circuits may step down a 12 V level to the 1.3 V level required by the CPU or a 5 V level to the 1.8 V level required by DDR type SDRAM.
2. “Integrated Driver-MOSFET (DrMOS)” :DrMOS is a package standard proposed by Intel Corporation that features integration of a driver IC and two high-side/low-side MOSFETs
3. Intel and the Intel logo are trademarks of Intel Corporation in the United States and other countries.
4. High-side/low-side MOSFETs: The high-side and low-side MOSFETs are used as the non-isolated DC-DC converter switch, and the voltage is converted by alternately switching these devices on and off. The high-side MOSFET is used for DC-DC converter control, and the low-side MOSFET is used for synchronous rectification.
• CPU voltage regulators and DDR type SDRAM DC-DC converters used in servers and PCs
• DC-DC converters for FPGAs and high-performance digital signal processors
• DC-DC converters for digital appliances, games, and other consumer electronic products.
For further information and reader enquiries:
Jasper Credland, Renesas Technology Europe Ltd., Dukes Meadow, Millboard Road, Bourne End, SL8 5FH
Tel: +44 (0)1628 585163
Fax: +44 (0)1628 585180
About Renesas Technology Corp.
Renesas Technology Corp. is one of the world's leading semiconductor system solutions providers for mobile, automotive and PC/AV (Audio Visual) markets and the world's No.1 supplier of microcontrollers. It is also a leading provider of LCD Driver ICs, Smart Card microcontrollers, RF-ICs, High Power Amplifiers, Mixed Signal ICs, System-on-Chip (SoC), System-in-Package (SiP) and more. Established in 2003 as a joint venture between Hitachi, Ltd. (TSE:6501, NYSE:HIT) and Mitsubishi Electric Corporation (TSE:6503), Renesas Technology achieved consolidated revenue of 951 billion JPY in FY2007 (end of March 2008). Renesas Technology is based in Tokyo, Japan and has a global network of manufacturing, design and sales operations in 17 countries with 26,800 employees worldwide.
For further information, please visit http://www.renesas.com
Headquartered in Buckinghamshire, UK, Renesas Technology Europe has offices in Denmark, Finland, France, Germany (3 offices), Italy, Spain, Sweden and Turkey, and representation via related companies in the Czech Republic, South Africa, Russia and Israel.
In Europe, Renesas focuses on automotive (control, networking, infotainment), wireless (GSM, CDMA and Bluetooth), smart card and microcontroller applications such as white goods, motor control, metering, energy management, building security and healthcare. It employs over 150 engineers to develop solutions for the European market and to assist customers with application development. Renesas is a leading supplier of smart card ICs in Europe. Europe is the world’s largest market for automotive electronics and microcontrollers, and is the region of most design influence for wireless electronic products. Feedback from customers in Europe has great influence on Renesas’ product development.
Note: The above text is the public part of the press release obtained from the manufacturer (with minor modifications). EETimes Europe cannot be held responsible for the claims and statements made by the manufacturer. The text is intended as a supplement to the new product presentations in EETimes Europe magazine.