RF Micro Devices, Inc. has broadened its portfolio of 3G front ends for the open market with the release of two new WCDMA/HSDPA power amplifiers (PAs) the RF3267 and the RF6266. The newly introduced, highly integrated WCDMA/HSDPA PAs are designed to support the critical needs of next-generation, multi-band, multimode 3G handsets and smartphones. Based upon current customer forecasts and design activity, RFMD anticipates volume shipments of the RF3267 and RF6266 to commence in the current quarter.
RFMD’s RF3267 is a Band 1 (1920 to 1980 MHz) WCDMA/HSDPA PA with a digitally controlled low-power mode, which allows operation up to 19dBm with reduced current consumption. The RF3267 features an integrated coupler, which allows handset designers to eliminate the external coupler traditionally placed at the output of the PA. The integration of additional functionality is achieved without growing the industry-leading 3x3x0.9 mm package size, which was first introduced with the successful prior generation PA (the RF3266). By maintaining pin-for-pin compatibility with the highly successful prior generation PA, RFMD’s RF3267 assists handset original equipment manufacturers (OEMs) seeking to shrink handset RF sections in support of more compact and thinner devices.
RFMD’s RF6266 WCDMA/HSDPA PA combines a similar feature set to the RF3267 with a compact 3x3x0.9 mm package and the ability to operate in either Band 5 (824 to 849 MHz) or Band 8 (880 to 915 MHz). Used in combination, the RF3267 and RF6266 provide a compact solution for multi-band, multimode 3G handset designs targeted for the North American or European Union (EU) markets.
RFMD is capturing additional 3G revenue as the Company introduces innovative cellular front end standard products to the open market and as increasingly complex 3G multimode handsets require additional content, including duplexers, filters and front end power management. The majority of the world’s handset manufacturers utilize standard products to satisfy their cellular front end requirements, and RFMD expects to introduce a record number of cellular RF standard products for the open market in calendar year 2009.
RFMD is the industry leader in 3G front ends and enjoys an advantage in 3G handset design activity, given its leading product portfolio, manufacturing scale, systems-level expertise and packaging and assembly capabilities — all of which enable RFMD to minimize complexity, reduce component count and optimize the RF design of multi-band, multimode WCDMA/HSDPA handsets and smartphones.
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design and manufacture of high-performance semiconductor components. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world’s leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD’s web site at www.rfmd.com.
RF Micro Devices Inc.
Ben Thomas, Director, Corporate Relations
7628 Thorndike Road
Greensboro, NC 27409-9421, USA
Tel: +1 (336) 678-7337
Note: The above text is the public part of the press release obtained from the manufacturer (with minor modifications). EETimes Europe cannot be held responsible for the claims and statements made by the manufacturer. The text is intended as a supplement to the new product presentations in EETimes Europe magazine.