ST unveils power MOSFET to boost power-supply efficiency

PARIS – European chipmaker STMicroelectronics NV has introduced a low micro-Ohm ON-resistance power MOSFET aiming to reduce losses and improve efficiency in demanding power supply systems.

STMicroelectronics noted that its power MOSFET, dubbed STV300NH02L, is suitable for the paralleling configuration power supplies that are used to increase system reliability in server applications.

ST claimed it has developed a ribbon-bonding technology that delivers a low typical Rds(on) of 800 micro-Ohms (0.8-mOhm). The Geneva-based group added that its 20V device, which suits for reducing secondary rectification losses in high-efficiency DC DC converters, provides “excellent protection under short-circuit conditions, with a very low turn-off time.”

ST concluded that its STV300NH02L power MOSFET is available in a PowerSO-10 package, priced at $4.50 in quantities of 1000 pieces.

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