STMicroelectronics power MOSFET claims best on-resistance per area in 650 V rating

Winchester, UK – STMicroelectronics is claiming a performance breakthrough for silicon power MOSFETs by achieving the best on-resistance per die area in a 650 V rating with the launch of the company's MDmesh V technology.

ST's Multi-Drain Mesh technology will underpin the company's new generation of 650 V MOSFETs with RDS(ON) reaching below 0.079 Ohm in compact power packages to deliver industry-leading efficiency and power density.

The MDmesh V devices target power-conversion systems where small size and low energy consumption are major goals for design engineers.

The energy savings and higher power density of MDmesh V MOSFETs will deliver improvements for end-user products such as laptop power adapters, LCD monitors and TVs, lighting ballasts, telecom equipment, solar converters and other applications requiring high-voltage power-factor correction or switched-mode power conversion.

Unveiling the first of what will eventually be a series of 35 MDmesh V devices available to the market, ST specified RDS(ON) of 0.079 Ohms for the 33 A STP42N65M5 in the TO-220 package. The saving contributes to efficiency improvements, delivering what the company claims is the industry's best RDS(ON) in the majority of the power conversion systems. The complete STx42N65M5 family offers additional package options including the surface-mount D2PAK as well as TO-220FP, I2PAK, and TO-247. The STx16N65M5 family, also at 650 V, is in full production, rated at 0.299 Ohm RDS(ON) and 12 A.

Marking the latest evolution of ST's proven Multi-Drain Mesh technology, MDmesh V achieves its RDS(ON) per area performance by improving the transistor drain structure to lower the drain-source voltage drop. The new drain structure reduces the device's on-state losses while also maintaining low gate charge (Qg ), enabling energy-efficient switching at high speeds and delivering a low 'RDS(ON) x Qg ' Figure of Merit (FOM). The breakdown voltage of 650 V is also higher than competing 600 V devices and delivers a extra safety margin for designers. A further advantage of ST's MDmesh V MOSFETs is a cleaner turn-off waveform, enabling easier gate control and simpler filtering due to reduced EMI.

The MDmesh V generation of devices is targeting the global market for power MOSFETS, which was valued at $1.3 billion last year and represents 3.5 billion devices. The planar approach addresses 80 percent of the $1.3bn market but ST's new multiple drain super junction approach is targeting the growth area of the market.

The MDmesh V power MOSFETs will be produced at ST's wafer fab facilities located in Catania, Italy and Singapore. The packaging of the devices will take place in China and Morroco.

ST's roadmap for MDmesh V 650V MOSFETs includes higher current devices with RDS(ON) as low as 0.022 Ohms in Max247 and 0.038 Ohms in TO-247. The devices will be available in March 2009.

“Going from the second generation to the new fifth generation of Multi-Drain Mesh technology devices we have achieved a 40 percent improvement in RDS(ON) of the devices,” declared Ian Wilson, General Manager of STMicroelectronics Power MOSFET Division. “We are already working on a sixth generation device to come out in couple of years' time. Silicon Carbide (SiC) based devices are also planned for 2012 which will address new high performance applications in aerospace and defence markets”.

“MDMesh V represents a major step forward in leading edge high voltage power. With MDMesh V, ST is looking to offer the lowest RDS(ON) per unit area of silicon for efficiency as well as the lowest RDS(ON) in any given package to improve the power density of the applications. The devices are demonstrating in real world applications very user friendly switching waveforms as well. And we are offering an extra safety margin of the voltage on the top as a bonus”.

“The Mesh V devices are all 650 V guaranteed rating devices versus the industry standard 600 V so the additional 50 V offers an extra margin and more design flexibility for the power supply designer,” explained Wilson. “This means that designers will need to take fewer precautions versus spikes and it offers them a better safety margin especially for low temperature applications”.

Wilson continued: “Power conversion high frequency applications are not just focused on resistance losses but also dynamic switching losses. The higher frequency you go to, the more important is the dynamic efficiency. Critical in high volt devices is the output capacitance and the energy absorbed charging and discharging that capacitance when that device is switched. MDmesh V shows a significant advantage in terms of dynamic performance for power losses and efficiency. For design engineers the smoother switching performance of the MDMesh V is useful for combating EMI. The new devices require less stringent EMI filtering which offers potential cost savings”.

Maurizio Giudice, Marketing Director, Power MOSFET Division, STMicroelectronics, said: “The improvement in RDS(ON) achieved with MDmesh V will significantly reduce losses in line-voltage PFC circuits and power supplies, which will in turn enable new generations of electronic products offering better energy ratings and smaller dimensions. This new technology will help product designers tackle emerging challenges such as the high efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital Watts normally lost in power-control modules.”

Availability and Pricing

Prices for the STx42N65M5 begin at $10.00 and the STx16N65M5 are available from $6.00, in quantities of 1000 units.

Product Selector data for: MDmesh V devices

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