Toshiba optimises GaA FET line for power efficiency

Toshiba America Electronic Components, Inc. (TAEC) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with three new devices optimised for power efficiency. The Power Added Efficiency enhanced GaAs FETs are targeted for microwave radios and solid-state power amplifiers (SSPAs) and will be on show at the 2009 IEEE MTT-S International Microwave Symposium.

Two new Extended C-Band GaAs FETs for microwave digital radios support point-to-point and point-to-multipoint terrestrial communications, and operate in the 5.85 to 6.75 GHz range. The TIM5867-8UL has an output power at 1dB gain compression point of 8W, or 39.5dBm (typ.), linear gain of 10.0dB (typ.) and power added efficiency of 36 percent. The TIM5867-30UL features an output power at 1dB gain compression point of 30W, or 45.0dBm (typ.), linear gain of 10.0dB (typ.), and power efficiency of 41 percent.

For satellite solid-state power amplifier (SSPA) applications, Toshiba has added a 60W C-band power amplifier that operates in the 7.7 to 8.5 GHz range, with higher gain. The TIM7785-60UL has an output power at one-dB gain compression point of 48dBm (typ.), gain of 7.5dB (typ.) and power efficiency of 36 percent.

“Toshiba has a broad power GaAs FET product family to support extended C-band, but many customers have asked us to upgrade the family using the latest process technology. High gain and high power added efficiency features will help designers build energy-efficient microwave radios,” explained Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC's Discrete Business Unit. “One of the design challenges with 7 to 8GHz SSPAs has traditionally been that they sometimes have a lower device gain compared to 5 to 6GHz parts, so designers could not use the same lineup for 7 to 8GHz power amplifiers as they do for lower frequency amplifiers. The TIM7785-60UL, 60W Power GaAs FET offers 7.5dB of G1dB, which is a 1.5dB improvement over Toshiba's previous 60W product in that band. The improved gain will help microwave designers reduce the number of parts in their overall system.”

More information can be found at

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