Avago Technologies has added the latest edition to its family of ultra low noise, high gain, high linearity Gallium Arsenide (GaAs) active bias amplifiers for use in cellular infrastructure applications.
Avago's MGA-633P8, which is an easy-to-use GaAs monolithic microwave IC (MMIC) low noise amplifier (LNA), provides 'Best in Class' performance and has a compact footprint. The amplifier has a common printed circuit board layout, which is ideal for front-end applications used in cellular base stations. The MGA-633P8 is designed to be used as a first stage LNA for cellular base station transceiver radio cards, tower mounted amplifiers, combiners, repeaters and remote/digital radio heads.
The MGA-633P8 uses Avago's proprietary GaAs Enhancement-mode pHEMT process to achieve such a high gain with a very low noise figure. Housed in a compact 2.0 mm by 2.0 mm by 0.75 mm 8-pin Quad-Flat-Non-Lead (QFN) package, the MGA-633P8 is designed to enable cellular applications that operate within the 450 to 2000MHz frequency range to achieve superior performance levels. As a result, designers will be able to use this active bias LNA to develop next-generation cellular applications that are more compact with more features and functions to satisfy the growing needs of designers. With its compact low-profile footprint coupled with its low noise, high gain and high linearity features the MGA-633P8 is an ideal choice for use in line terminal equipment, GSM, CDMA, WCDMA, CDMA2000 and TD-SCDMA cellular infrastructure applications.
- Ultra-low noise figure: 0.37 dB
- High linearity performance
- 18 dB gain
- 37 dBm output IP3
- 22 dBM output power at 1dB gain compression.
- Tape-and-reel packaging option available
- Pb-Free and RoHS compliant
Samples and production quantities are available now through Avago's direct sales channel and worldwide distribution partners.